InAs/GaAsSb Type-II Superlattice LWIR Focal Plane Arrays Detectors Grown on InAs Substrates

被引：5

作者：

Huang, Min ^{[1
]}

Chen, Jianxin ^{[1
]}

Xu, Zhicheng ^{[1
]}

Xu, Jiajia ^{[1
]}

Bai, Zhizhong ^{[1
]}

Wang, Fangfang ^{[1
]}

Zhou, Yi ^{[1
]}

Huang, Aibo ^{[1
]}

Ding, Ruijun ^{[1
]}

He, Li ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detector, Shanghai 200083, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2020年 / 32卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Type-II superlattice; InAs/GaAsSb; photodetectors; long wavelength infrared; focal plane array;

D O I：

10.1109/LPT.2020.2973204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs/GaAsSb type-II superlattice (T2SL) materials grown at a higher temperature and lattice-matched to InAs substrates are considered to have significant advantages in long wavelength infrared (LWIR) detection. In this work, an InAs/GaAsSb T2SL LWIR focal plane array (FPA) was fabricated and evaluated. The FPA has a format of 320 x 256 with a pixel pitch of 30 mu m and exhibits a 100% cutoff wavelength of 9.5 mu m at 80 K. Under a bias of -0.02V, the detectors show a dark current of 1.7 x 10(-5) A/cm(2) and a differential resistance-area of 1.5 x 10(3) Omega . cm(2). The noise equivalent temperature difference and operability of the FPA are 20.7 mK and 99.2% respectively under an integration time of 400 mu s, a 300 K background and F/2.0 optics. This high-performance FPA further verifies the feasibility of InAs/GaAsSb T2SL in LWIR detection.

引用

页码：453 / 456

页数：4

共 14 条

[11] Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection
Wang, Fangfang
Chen, Jianxin
Xu, Zhicheng
Zhou, Yi
He, Li
[J]. OPTICS EXPRESS, 2017, 25 (03): : 1629 - 1635
[12] InAs-based InAs/GaAsSb type-II superlattices: Growth and characterization
Wang, Fangfang
Chen, Jianxin
Xu, Zhicheng
Zhou, Yi
He, Li
[J]. JOURNAL OF CRYSTAL GROWTH, 2015, 416 : 130 - 133
[13] High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates
Xu, Zhicheng
Chen, Jianxin
Wang, Fangfang
Zhou, Yi
He, Li
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (05)
[14] Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control
Zuo, Daniel
Qiao, Pengfei
Wasserman, Daniel
Chuang, Shun Lien
[J]. APPLIED PHYSICS LETTERS, 2013, 102 (14)

← 1 2 →