InAs/GaAsSb Type-II Superlattice LWIR Focal Plane Arrays Detectors Grown on InAs Substrates

被引：5
作者：
Huang, Min [1 ]
Chen, Jianxin [1 ]
Xu, Zhicheng [1 ]
Xu, Jiajia [1 ]
Bai, Zhizhong [1 ]
Wang, Fangfang [1 ]
Zhou, Yi [1 ]
Huang, Aibo [1 ]
Ding, Ruijun [1 ]
He, Li [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detector, Shanghai 200083, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2020年 / 32卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Type-II superlattice; InAs/GaAsSb; photodetectors; long wavelength infrared; focal plane array;
D O I：
10.1109/LPT.2020.2973204
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InAs/GaAsSb type-II superlattice (T2SL) materials grown at a higher temperature and lattice-matched to InAs substrates are considered to have significant advantages in long wavelength infrared (LWIR) detection. In this work, an InAs/GaAsSb T2SL LWIR focal plane array (FPA) was fabricated and evaluated. The FPA has a format of 320 x 256 with a pixel pitch of 30 mu m and exhibits a 100% cutoff wavelength of 9.5 mu m at 80 K. Under a bias of -0.02V, the detectors show a dark current of 1.7 x 10(-5) A/cm(2) and a differential resistance-area of 1.5 x 10(3) Omega . cm(2). The noise equivalent temperature difference and operability of the FPA are 20.7 mK and 99.2% respectively under an integration time of 400 mu s, a 300 K background and F/2.0 optics. This high-performance FPA further verifies the feasibility of InAs/GaAsSb T2SL in LWIR detection.
引用
收藏
页码：453 / 456
页数：4
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