Annealing of aluminum implanted 4H-SiC: Comparison of furnace and lamp annealing

被引：4
作者：
Rambach, M
Bauer, AJ
Frey, L
Friedrichs, P
Ryssel, H
机构：
[1] Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany
[2] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany
[3] SiCED Elect Dev GmbH & Co KG, D-91050 Erlangen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
annealing; ion implantation; sheet resistance; surface roughness;
D O I：
10.4028/www.scientific.net/MSF.483-485.621
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface degradation and electrical parameters. A sheet resistance of about 20kΩ/□ was obtained for an aluminum implantation dose of 1.2.• 10(11)cm(-2) and annealing in the furnace at 1700° C for 30min. For the same implantation dose, lamp annealing at 1770° C for 5min resulted in a three times higher sheet resistance of 60kΩ/□. The surface roughness was best for the lamp system and stayed below 1nm for Al doses lower than 1• 10(15)cm(-2).
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收藏
页码：621 / 624
页数：4
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