Gigahertz frequency flexible carbon nanotube transistors

被引：54
作者：
Chimot, N.
Derycke, V. [1 ]
Goffman, M. F.
Bourgoin, J. P.
Happy, H.
Dambrine, G.
机构：
[1] CEA Saclay, DSM DRECA SPEC, CNRS URA 2464, Serv Phys Etat Condense, F-91191 Gif Sur Yvette, France
[2] Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 15期
关键词：
D O I：
10.1063/1.2798583
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the high frequency performances of flexible field-effect transistors based on carbon nanotubes. A large density of mostly aligned carbon nanotubes deposited on a flexible substrate by dielectrophoresis serves as the channel. The transistors display a constant transconductance up to at least 6 GHz and a current gain cutoff frequency (f(T)) as high as 1 GHz at V-DS=-700 mV. Bending tests show that the devices can withstand a high degree of flexion characterized by a constant transconductance for radius of curvature as small as 3.3 mm. (C) 2007 American Institute of Physics.
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页数：3
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