Impact of boron diffusion at MgO grain boundaries on magneto transport properties of MgO/CoFeB/W magnetic tunnel junctions

被引：29
作者：
Xu, X. D. [1 ]
Mukaiyama, K. [1 ]
Kasai, S. [1 ]
Ohkubo, T. [1 ]
Hono, K. [1 ]
机构：
[1] Natl Inst Mat Sci, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
来源：
ACTA MATERIALIA | 2018年 / 161卷
关键词：
Magnetic tunnel junctions; Tunneling magnetoresistance; Resistance area product; Boron diffusion; Grain boundary; ROOM-TEMPERATURE; ATOMIC-STRUCTURE; SPIN-TRANSFER; MAGNETORESISTANCE; ANISOTROPY; BUFFER;
D O I：
10.1016/j.actamat.2018.09.028
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Controlling the B diffusion in CoFeB-MgO based magnetic tunnel junctions (MTJs) is important to realize the large tunneling magnetoresistance (TMR) ratio, which is required to realize high density magnetic random access memories (MRAMs). Here we investigate the detailed microstructure of the MgO-CoFeB MTJs having W underlayer and overlayer in comparison with well-studied MTJs with Ta underlayer and overlayer. Detailed microstructure analysis based on transmission electron microscopy and electron energy loss spectroscopy revealed that B diffused into Ta under-/overlayers and crystallization of CoFeB to CoFe efficiently occurred upon annealing at 300 degrees C and 400 degrees C in MTJs with Ta underlayers. In contrast, B diffused into the [001] tilt grain boundaries of MgO barrier in the case of MTJs with W under-/overlayers. These structural differences well explain the difference in post annealing temperature dependence of TMR ratio and resistance area product (RA) of MTJs with Ta and W under-/overlayers. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：360 / 366
页数：7
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