A Broadband Integrated Class-J Power Amplifier in GaAs pHEMT Technology

被引：32

作者：

Alizadeh, Amirreza ^{[1
]}

Medi, Ali ^{[1
]}

机构：

[1] Sharif Univ Technol, Dept Elect Engn, Tehran 113659363, Iran

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2016年 / 64卷 / 06期

关键词：

Class-J; monolithic microwave integrated circuit (MMIC); pHEMT; power amplifiers (PAs); wideband amplifiers;

D O I：

10.1109/TMTT.2016.2552167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a design methodology for class-J monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). Theoretical derivations of optimum load impedances, output power, efficiency, and maximum bandwidth are described in presence of nonlinear drain-source resistance of transistors (RDS). A procedure is developed for ideal transistor sizing where transistors are concurrently stabilized and sized to achieve the maximum power-added efficiency (PAE). A 3.5-7 GHz, 0.5-W class-J PA is implemented in a 0.1-mu m AlGaAs-InGaAs pHEMT technology to check the accuracy of the proposed approach. With chip dimensions of 1.57 x 1.29 mm(2), the PA achieves 56% average PAE over the frequency band while maintaining an average 11-dB small-signal gain.

引用

页码：1822 / 1830

页数：9

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