Life-Stress Relationship for Thin Film Transistor Gate Line Interconnects on Flexible Substrates

被引:0
作者
Martin, Thomas [1 ]
Christou, Aris [1 ]
机构
[1] Univ Maryland, College Pk, MD 20742 USA
来源
OPTOELECTRONIC INTERCONNECTS AND COMPONENT INTEGRATION IX | 2010年 / 7607卷
关键词
Thin Film Transistor; TFT; flexible electronics; interconnects; stress-life model; OXIDE;
D O I
10.1117/12.840044
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Change in resistance of interconnect traces on flexible substrates is dependent on material properties and mechanical stress imposed by tensile strain. Dedicated test structures and a mechanical flexing / data collection system were designed and fabricated to collect time to failure data based on cyclic loading to different radii of curvature. We propose a life-stress model based on an inverse power law relationship defining the characteristic life of a Weibull life distribution.
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页数:9
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