Effect of interface states on negative capacitance characteristics in GaAs homojunction far-infrared detectors

被引：25
作者：
Shen, WZ
Perera, AGU
机构：
[1] Shanghai Jiao Tong Univ, Dept Appl Phys, Shanghai 200030, Peoples R China
[2] Acad Sinica, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[3] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2001年 / 72卷 / 01期
关键词：
D O I：
10.1007/s003390000566
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bias-, frequency- and temperature-defendent capacitance characteristics of p-GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared detectors are reported. A strong negative capacitance phenomenon has been observed. The origin of this effect is believed to be due to the carrier capture and emission at interface states, and has been confirmed by a comparison study of capacitance characteristics on p-GaAs HIWIP detectors with different intel face state densities. A fitting data based on charging-discharging current and the inertial conducting current model show good agreement with the experimental observations.
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收藏
页码：107 / 111
页数：5
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