Electron field emission from diamond grown by a multiple pulsed laser process

被引:1
|
作者
Badzian, A [1 ]
Weiss, BL
Roy, R
Badzian, T
Drawl, W
Mistry, P
Turchan, MC
机构
[1] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
[2] QQC Inc, Dearborn, MI 48126 USA
来源
关键词
D O I
10.1116/1.590029
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Among wide-band-gap materials, diamond has been tested extensively in many laboratories for its applicability as an electron emission material. The results are encouraging but also point out the necessity of modifying the diamond films with respect to their chemical composition and/or atomic structure. This article reports on electron emission measurements conducted on diamond coatings deposited on WC/Co alloy by a multiple pulsed laser process. The electron emission has been measured in a diode configuration with a diamond surface-anode spacing of 20 and 50 mu m in vacuum at P = 10(-7) Torr. Current densities of 6 mA/cm(2) have been calculated at an applied voltage of 3000 V (for 20 mu m). We propose an explanation for electron emission. (C) 1998 American Vacuum Society.
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页码:1184 / 1187
页数:4
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