Rectifying characteristics of Te-doped GaAs nanowires

被引：30

作者：

Salehzadeh, O. ^{[1
]}

Chen, M. X. ^{[1
]}

Kavanagh, K. L. ^{[1
]}

Watkins, S. P. ^{[1
]}

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 18期

基金：

加拿大自然科学与工程研究理事会;

关键词：

SCHOTTKY DIODES;

D O I：

10.1063/1.3658633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the electrical properties of Te-doped GaAs nanowires (NW) grown via the vapor-liquid-solid mechanism. Gold nanoparticles were used as growth catalysts and contacts for electrical measurements using a nanoprobe technique. Semi-log I-V curves show 6-8 decades of forward-voltage linearity giving an ideality factor of 1.25 +/- 0.06 and barrier height of 0.78 +/- 0.04 eV. When normalized to NW cross-sectional area, all curves overlapped consistent with an n-type carrier concentration (9 +/- 1) x 10(17) cm(-3) and a constant NW resistivity (2.5 +/- 0.5) x 10(-3) Omega cm. Raman spectroscopy indicated a small surface depletion width of less than 5 nm. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3658633]

引用

页数：3

共 31 条

[21] Current-voltage-measurement temperature characteristics depending on the barrier-forming contact metal thickness in Au/Cu/n-Si/Au-Sb/Ni rectifying contacts [J].

Efeoglu, Hasan ;

Turut, Abdulmecit .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 143

[22] Peculiarities of current transport in boron-doped diamond Schottky diodes with hysteresis in current-voltage characteristics [J].

Nikolenko, A. S. ;

Strelchuk, V. V. ;

Kudryk, Y. Y. ;

Danylenko, I. M. ;

Belyaev, A. E. ;

Kovalenko, T. V. ;

Lysakovskyi, V. V. ;

Ivakhnenko, S. O. ;

Dub, M. M. ;

Sai, P. O. ;

Knap, W. .

[23] Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung's model [J].

Korucu, Demet ;

Turut, Abdulmecit ;

Efeoglu, Hasan .

PHYSICA B-CONDENSED MATTER, 2013, 414 :35-41

[24] Effects of Au-Ag and Au-Cu alloy ratios on the temperature dependent current-voltage characteristics of Au-Ag/n-GaAs/In and Au-Cu/n-GaAs/In Schottky diodes [J].

Kup, S. ;

Taser, A. ;

Kanmaz, I. ;

Guzeldir, B. ;

Saglam, M. .

MATERIALS TODAY-PROCEEDINGS, 2019, 18 :1936-1945

[25] Current-voltage and capacitance-voltage characteristics of cadmium-doped p-silicon Schottky diodes [J].

Bodunrin, J. O. ;

Oeba, D. A. ;

Moloi, S. J. .

SENSORS AND ACTUATORS A-PHYSICAL, 2021, 331

[26] Effect of annealing temperature on the characteristics of the modified spray deposited Li-doped NiO films and their applications in transparent heterojunction diode [J].

Wu, Chia-Ching ;

Yang, Cheng-Fu .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 132 :492-498

[27] Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers [J].

Hu, Jie ;

Stoffels, Steve ;

Lenci, Silvia ;

You, Shuzhen ;

Bakeroot, Benoit ;

Ronchi, Nicolo ;

Venegas, Rafael ;

Groeseneken, Guido ;

Decoutere, Stefaan .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (05) :1229-1235

[28] Effect of (Co-TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures [J].

Farazin, Javid ;

Asl, Mehdi Shahedi ;

Pirgholi-Givi, Gholamreza ;

Delbari, Seyed Ali ;

Namini, Abbas Sabahi ;

Altindal, Semsettin ;

Azizian-Kalandaragh, Yashar .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (17) :21909-21922

[29] The origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n-GaAs contacts at low temperatures (T≤300 K) [J].

Dokme, Ilbilge ;

Yeriskin, Seckin Altindal ;

Yildirim, Mert ;

Durmus, Perihan .

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2020, 22 (3-4) :149-155

[30] Electrical properties and I-V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode [J].

Olyaee, Hassan Ghalami Bavil ;

Foot, Peter J. S. ;

Montgomery, Vincent .

JOURNAL OF THEORETICAL AND APPLIED PHYSICS, 2015, 9 (04) :315-319

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