Rectifying characteristics of Te-doped GaAs nanowires

被引：30

作者：

Salehzadeh, O. ^{[1
]}

Chen, M. X. ^{[1
]}

Kavanagh, K. L. ^{[1
]}

Watkins, S. P. ^{[1
]}

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 18期

基金：

加拿大自然科学与工程研究理事会;

关键词：

SCHOTTKY DIODES;

D O I：

10.1063/1.3658633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the electrical properties of Te-doped GaAs nanowires (NW) grown via the vapor-liquid-solid mechanism. Gold nanoparticles were used as growth catalysts and contacts for electrical measurements using a nanoprobe technique. Semi-log I-V curves show 6-8 decades of forward-voltage linearity giving an ideality factor of 1.25 +/- 0.06 and barrier height of 0.78 +/- 0.04 eV. When normalized to NW cross-sectional area, all curves overlapped consistent with an n-type carrier concentration (9 +/- 1) x 10(17) cm(-3) and a constant NW resistivity (2.5 +/- 0.5) x 10(-3) Omega cm. Raman spectroscopy indicated a small surface depletion width of less than 5 nm. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3658633]

引用

页数：3

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