Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example

被引：31

作者：

He, Jr-Hau ^{[1
]}

Ke, Jr-Jian ^{[1
]}

Chang, Pei-Hsin ^{[1
]}

Tsai, Kun-Tong ^{[1
]}

Yang, P. C. ^{[2
]}

Chan, I-Min ^{[2
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Inst Photon & Optoelect, Taipei 10617, Taiwan

[2] AU Optron Corp, Adv Technol Dev Dept, Taichung 40763, Taiwan

来源：

NANOSCALE | 2012年 / 4卷 / 11期

关键词：

N-TYPE ZNO; ELECTRICAL-PROPERTIES; EPITAXIAL LAYER; CONTACTS; RESISTANCE; NANOSTRUCTURES; PHOTODETECTORS; ALIGNMENT; BEHAVIOR; ARRAYS;

D O I：

10.1039/c2nr30688c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrated a nanocontacting scheme using a focus ion beam (FIB) system without further heat treatment for ZnO nanowires. This scheme includes Ga ion surface modification and direct-write Pt deposition induced by Ga ion, leading to an Ohmic nanocontact with a specific contact resistance as low as 2.5 x 10(-6) Omega cm(2). Temperature-dependent measurements show that the transport of the FIB-Pt contact on the ZnO nanowire with local surface modification is governed by field emission tunneling. Taking advantage of area-selected and room-temperature processes, Ga ion surface modification and direct-write Pt deposition using a FIB system demonstrates a feasible Ohmic scheme.

引用

页码：3399 / 3404

页数：6

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