High-sensitivity microwave power sensor for GaAs-MMIC implementation

被引:61
作者
Dehe, A [1 ]
Krozer, V [1 ]
Chen, B [1 ]
Hartnagel, HL [1 ]
机构
[1] TU CHEMNITZ ZWICKAU, LEHRSTUHL HOCHFREQUENZTECH, D-09126 CHEMNITZ, GERMANY
关键词
gallium arsenide; MMIC; power measurement;
D O I
10.1049/el:19961416
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GaAs bulk micromachining combined with MESFET technology has been applied to fabricate a thermoelectric microwave power sensor in a terminating load configuration. Its advantages are technological compatibility with MMIC processes combined with excellent performance: the sensitivity under normal ambient pressure is 2.02 V/W, inherent linearity over a dynamic range of 48 dB and a thermal time constant of 500 mu s; maximum VSWR of 1.07 up to 26.5 GHz. Such integrated sensors can also be used in the millimetre-wave regime.
引用
收藏
页码:2149 / 2150
页数:2
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