Carrier transport and its variation of laser-lateral-crystallised poly-Si TFTs

被引：4

作者：

Kuroki, S. -I. ^{[1
]}

Fujii, S. ^{[1
]}

Kotani, K. ^{[1
]}

Ito, T. ^{[2
,3
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

[2] Tokyo Inst Technol, Solut Res Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima 7398527, Japan

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 24期

关键词：

THIN-FILM TRANSISTORS; INVERSION LAYER MOBILITY; UNIVERSALITY; MOSFETS;

D O I：

10.1049/el.2011.2854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier transport in continuous-wave laser lateral-crystallised (CLC) poly-Si thin film transistors (TFTs) has been investigated. Large Si grains formed by the laser crystallisation, enhanced electron mobility of the CLC poly-Si TFT. It was found that the effective electron mobility was free from grain boundary scattering and was mainly governed by phonon scattering; its variation, however, was governed by the number of grains in the channel region.

引用

页码：1336 / 1337

页数：2

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