Influence of doping rate in Er3+: ZnO films on emission characteristics

被引：26

作者：

Douglas, L. ^{[1
]}

Mundle, R. ^{[1
]}

Konda, R. ^{[1
]}

Bonner, C. E. ^{[1
]}

Pradhan, A. K. ^{[1
]}

Sahu, D. R. ^{[2
]}

Huang, J-L. ^{[2
]}

机构：

[1] Norfolk State Univ, Mat Res Ctr, Norfolk, VA 23504 USA

[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan

来源：

OPTICS LETTERS | 2008年 / 33卷 / 08期

关键词：

D O I：

10.1364/OL.33.000815

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High-quality Er3+ : ZnO films were grown by the pulsed-laser deposition technique for 0.5 and 2 wt. % Er doping. Two peaks were observed at approximately 1.54 mu m in the photoluminescence spectra of samples with 2 wt. % doping contrary to only one peak in the 0.5 wt. % doped sample. Both peaks were found to be strongly temperature dependent. The microscopic studies clearly illustrate that the appearance of the additional peak is attributed to the environment of Er3+ ions in the form of ErO6 clusters, which are optically active centers in the ZnO matrix. These results are very important for designing waveguides for telecommunications. (C) 2008 Optical Society of America.

引用

页码：815 / 817

页数：3

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