Ge photodetectors integrated in CMOS photonic circuits

被引：2

作者：

Masin, G. ^{[1
]}

Sahni, S. ^{[1
]}

Capellini, G. ^{[2
]}

Witzens, J. ^{[1
]}

White, J. ^{[1
]}

Song, D. ^{[1
]}

Gunn, C. ^{[1
]}

机构：

[1] Luxtera Inc, 2320 Camino Vida Roble, Carlsbad, CA 92011 USA

[2] Univ Roma Tre, Dept Phys, I-00146 Rome, Italy

来源：

SILICON PHOTONICS III | 2008年 / 6898卷

关键词：

Ge detectors; Si optoelectronics; waveguide detectors; near infrared; optical communications;

D O I：

10.1117/12.767035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe our approach to the monolithic integration of Ge photodetectors in a photonics-enabled CMOS technology. Ge waveguide photodetectors allow fast and efficient conversion of optical signals in the near infrared (1.55um) to the electrical domain thus enabling the fabrication of compact, high speed (10Gbps) receivers.

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