Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes

被引：1
作者：
Hunag, Yang
Liu, Zhiqiang
Yi, Xiaoyan [1 ]
Guo, Yao
Wu, Shaoteng
Yuan, Guodong
Wang, Junxi
Wang, Cuohong
Li, Jinmin
机构：
[1] Chinese Acad Sci, Inst Semicond, R&D Ctr Semiconduct Lighting, Beijing 100083, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2016年 / 30卷 / 20期
基金：
中国国家自然科学基金;
关键词：
GaN; light-emitting diodes; efficiency droop; carrier leakage; model; EQE;
D O I：
10.1142/S0217984916502213
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new model for efficiency droop in InGaN/GaN light-emitting diodes (LEDs) is proposed, where the primary nonradiative recombination mechanisms, including Shockley Read Hall (SRH), Auger and carrier leakage, are considered. A room-temperature external quantum efficiency (EQE) measurement was performed on our designed samples and analyzed by the new model. Owing to advantages over the common "ABC + f(n) model", the "new model" is able to effectively extract recombination coefficients and calculate the leakage currents of the hole and electron. From this new model, we also found that hole leakage is distinct at low injection, while it disappears at high injection, which is contributed to the weak blocking effect of electron in quantum wells (QWs) at low injection.
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页数：9
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