Fast exciton spin relaxation in single quantum dots -: art. no. 233304

被引:44
作者
Favero, I
Cassabois, G
Voisin, C
Delalande, C
Roussignol, P
Ferreira, R
Couteau, C
Poizat, JP
Gérard, JM
机构
[1] Ecole Normale Super, Lab Pierre Aigrain, F-75231 Paris, France
[2] UJF, CNRS, CEA, Spectrometrie Phys Lab,Nanophys & Semicond Lab, F-38402 St Martin Dheres, France
[3] UJF, CNRS, CEA, Nanophys & Semicond Lab,DRFMC,SP2M, F-38054 St Martin Dheres, France
关键词
D O I
10.1103/PhysRevB.71.233304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in order to test the expected spin relaxation quenching in this system. We study the polarization anisotropy of the photoluminescence signal emitted by isolated quantum dots under steady-state or pulsed nonresonant excitation. We find that the longitudinal exciton spin relaxation time is strikingly short (<= 100 ps) even at low temperature. This result breaks down the picture of a frozen exciton spin in quantum dots.
引用
收藏
页数:4
相关论文
共 20 条
[1]   Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots -: art. no. 195315 [J].
Bayer, M ;
Ortner, G ;
Stern, O ;
Kuther, A ;
Gorbunov, AA ;
Forchel, A ;
Hawrylak, P ;
Fafard, S ;
Hinzer, K ;
Reinecke, TL ;
Walck, SN ;
Reithmaier, JP ;
Klopf, F ;
Schäfer, F .
PHYSICAL REVIEW B, 2002, 65 (19) :1953151-19531523
[2]   Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In0.60Ga0.40As quantum dots [J].
Bayer, M ;
Kuther, A ;
Forchel, A ;
Gorbunov, A ;
Timofeev, VB ;
Schäfer, F ;
Reithmaier, JP ;
Reinecke, TL ;
Walck, SN .
PHYSICAL REVIEW LETTERS, 1999, 82 (08) :1748-1751
[3]   Exciton and biexciton fine structure in single elongated islands grown on a vicinal surface [J].
Besombes, L ;
Kheng, K ;
Martrou, D .
PHYSICAL REVIEW LETTERS, 2000, 85 (02) :425-428
[4]   Pseudopotential calculation of the excitonic fine structure of million-atom self-assembled In1-xGaxAs/GaAs quantum dots -: art. no. 161306 [J].
Bester, G ;
Nair, S ;
Zunger, A .
PHYSICAL REVIEW B, 2003, 67 (16)
[5]   Cascade evolution and radiative recombination of quantum dot multiexcitons studied by time-resolved spectroscopy [J].
Dekel, E ;
Regelman, DV ;
Gershoni, D ;
Ehrenfreund, E ;
Schoenfeld, WV ;
Petroff, PM .
PHYSICAL REVIEW B, 2000, 62 (16) :11038-11045
[6]   Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble -: art. no. 041904 [J].
Favero, I ;
Cassabois, G ;
Jankovic, A ;
Ferreira, R ;
Darson, D ;
Voisin, C ;
Delalande, C ;
Roussignol, P ;
Badolato, A ;
Petroff, PM ;
Gérard, JM .
APPLIED PHYSICS LETTERS, 2005, 86 (04) :041904-1
[7]   Fine structure splitting in the optical spectra of single GaAs quantum dots [J].
Gammon, D ;
Snow, ES ;
Shanabrook, BV ;
Katzer, DS ;
Park, D .
PHYSICAL REVIEW LETTERS, 1996, 76 (16) :3005-3008
[8]   InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si [J].
Gerard, JM ;
Cabrol, O ;
Sermage, B .
APPLIED PHYSICS LETTERS, 1996, 68 (22) :3123-3125
[9]   Spin relaxation in semiconductor quantum dots [J].
Khaetskii, AV ;
Nazarov, YV .
PHYSICAL REVIEW B, 2000, 61 (19) :12639-12642
[10]   Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots [J].
Labeau, O ;
Tamarat, P ;
Lounis, B .
PHYSICAL REVIEW LETTERS, 2003, 90 (25) :4