High-Performance, All-Solution-Processed Organic Nanowire Transistor Arrays with Inkjet-Printing Patterned Electrodes

被引：29

作者：

Liu, Nanliu ^{[1
]}

Zhou, Yan ^{[2
]}

Ai, Na ^{[1
]}

Luo, Chan ^{[1
]}

Peng, Junbiao ^{[1
]}

Wang, Jian ^{[1
]}

Pei, Jian ^{[2
]}

Cao, Yong ^{[1
]}

机构：

[1] S China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Phys & Chem Luminescence, Guangzhou 510640, Guangdong, Peoples R China

[2] Peking Univ, Key Lab Bioorgan Chem & Mol Engn, Minist Educ, Coll Chem, Beijing 100871, Peoples R China

来源：

LANGMUIR | 2011年 / 27卷 / 24期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; FABRICATION; SURFACES;

D O I：

10.1021/la2033324

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic nanowire (NW) transistor arrays with a mobility of as high as 1.26 cm(2).V-1.S-1 are fabricated by combining the dip-coating process to align the NW into arrays with the inkjet printing process to pattern the source/drain electrodes. A narrow gap of similar to 20 mu m has been obtained by modifying the inkjet process. The all-solution process is proven to be a low-cost, high-yield, simple approach to fabricating high-performance organic NW transistor arrays over a large area.

引用

页码：14710 / 14715

页数：6

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