Computer simulation of a-Si:H/μc-Si:H diphasic silicon solar cells

被引:3
|
作者
Hao, HY [1 ]
Kong, GL
Zeng, XB
Xu, Y
Diao, HW
Liao, XB
机构
[1] Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, Sch Mat Sci & Technol, Beijing 100083, Peoples R China
关键词
diphasic silicon films; solar cell; computer simulation;
D O I
10.7498/aps.54.3370
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility lifetime product and bandgap were estimated by means of effective-medium theory. And then computer simulation of a-Si: H/mu c-Si: H diphasic thin film solar cells was performed. It was shown that the more crystalline fraction in the diphasic silicon films, the higher short circuit density, the lower open-circuit voltage and the lower efficiency. From the spectral response, we can see that the response in long wave region was improved significantly with increasing crystalline fraction in the silicon films. Taking Lambertian back refraction into account, the diphasic silicon films with 40%-50% crystalline fraction was considered to be the best intrinsic layer for the bottom solar cell in micromorph tandem.
引用
收藏
页码:3370 / 3374
页数:5
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