Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region

被引：21

作者：

Evtikhiev, VP ^{[1
]}

Kudryashov, IV ^{[1
]}

Kotel'nikov, EY ^{[1
]}

Tokranov, VE ^{[1
]}

Titkov, AN ^{[1
]}

Tarasov, IS ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 12期

关键词：

D O I：

10.1134/1.1187622

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD's) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6 degrees are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm(2). (C) 1998 American Institute of Physics. [S1063-7826(98)01312- X].

引用

页码：1323 / 1327

页数：5

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