Shifting Schottky barrier heights with ultra-thin dielectric layers

被引：31

作者：

Lin, L. ^{[1
]}

Robertson, J. ^{[1
]}

Clark, S. J. ^{[2
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] Univ Durham, Dept Phys, Durham, England

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

Schottky barrier; Germanium; Calculation; Metal induced gap states; Insulator; Nanowires; Contact resistance; BAND OFFSETS; OXIDES;

D O I：

10.1016/j.mee.2011.03.049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra-thin (similar to 1 nm) layers of dielectrics such as Al2O3 or SiNx inserted between the metal and the semiconductor can be used experimentally to shift the Schottky barrier height (SBH) of various semiconductors to reduce their contact resistance. This property is particularly valuable for n-Ge with a normally high n-type SBH or for nanowires. The mechanism is often described as Fermi level de-pinning. We show how the mechanism consists of two parts, Fermi level de-pinning plus an interfacial dipole layer. The preferred dielectrics can be chosen in terms of their band offsets. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1461 / 1463

页数：3

共 34 条

[11]

Kobayashi Masaharu, 2008, 2008 Symposium on VLSI Technology, P54, DOI 10.1109/VLSIT.2008.4588561

[12]

KOBAYASHI M, 2009, J APPL PHYS, V105, P36702

[13] Ohmic contact formation on n-type Ge [J].