Radiation hardness of a single crystal CVD diamond detector for MeV energy protons

被引:28
作者
Sato, Yuki [1 ]
Shimaoka, Takehiro [2 ]
Kaneko, Junichi H. [2 ]
Murakami, Hiroyuki [1 ]
Isobe, Mitsutaka [3 ]
Osakabe, Masaki [3 ]
Tsubota, Masakatsu [2 ]
Ochiai, Kentaro [4 ]
Chayahara, Akiyoshi [5 ]
Umezawa, Hitoshi [5 ]
Shikata, Shinichi [5 ]
机构
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[2] Hokkaido Univ, Grad Sch Engn, Sapporo, Hokkaido 0608628, Japan
[3] Natl Inst Nat Sci, Natl Inst Fus Sci, Toki, Gifu 5095292, Japan
[4] Japan Atom Energy Agcy, Fus Res & Dev Directorate, Tokai, Ibaraki 3191195, Japan
[5] Natl Inst Adv Ind Sci & Technol, Ikeda, Osaka 5638577, Japan
关键词
Plasma diagnostics; Diamond detector; Single-crystal CVD diamond; Radiation hardness; SILICON; DIAGNOSTICS; SURFACE; TFTR;
D O I
10.1016/j.nima.2014.12.036
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We have fabricated a particle detector using single crystal diamond grown by chemical vapor deposition. The irradiation dose dependence of the output pulse height from the diamond detector was measured using 3 MeV protons. The pulse height of the output signals from the diamond detector decreases as the amount of irradiation increases at count rates of 1.6-8.9 kcps because of polarization effects inside the diamond crystal. The polarization effect can be cancelled by applying a reverse bias voltage, which restores the pulse heights. Additionally, the radiation hardness performance for MeV energy protons was compared with that of a silicon surface barrier detector. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:147 / 150
页数:4
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