Atomic-scale mapping of interface reconstructions in multiferroic heterostructures

被引:22
作者
Huang, Weichuan [1 ,2 ]
Yin, Yuewei [1 ,2 ]
Li, Xiaoguang [1 ,2 ,3 ]
机构
[1] Univ Sci & Technol China, Dept Phys, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China
[3] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源
APPLIED PHYSICS REVIEWS | 2018年 / 5卷 / 04期
关键词
FERROELECTRIC TUNNEL-JUNCTIONS; MAGNETIC CIRCULAR-DICHROISM; DOMAIN-WALLS; ELECTRONIC-STRUCTURE; COMPLEX OXIDES; TRANSITION; SPIN; POLARIZATION; PHYSICS; ELECTRORESISTANCE;
D O I
10.1063/1.5053426
中图分类号
O59 [应用物理学];
学科分类号
摘要
With integrated electric and magnetic orders, multiferroic heterostructures have attracted great attention because of their significance in fundamental physics and promising applications. The physical mechanism underlying the technological innovations for multiferroic heterostructures results mainly from the interplay between the spin, charge, orbit, and lattice degrees of freedom at their interfaces. Benefiting from the fundamental technological breakthroughs in atomic-scale mapping, investigations involving site-by-site information at multiferroic heterointerfaces have recently grown. In this review, we summarize some recent progress in atomic-scale observations of the reconstructions of charges, orbitals, ions, and others at multiferroic interfaces. Correspondingly, recent advances in understanding of the interfacial effects on the transport properties in multiferroic heterostructures, especially in ferroelectric/multiferroic tunnel junctions, are presented. Finally, new inspirations for the exploration of interfacial physics using the emerging, atomic-scale techniques and the further design of devices with novel properties are proposed. Published by AIP Publishing.
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页数:23
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