Two-dimensional micro-Raman mapping of stress and strain distributions in strained silicon waveguides

被引:23
作者
Bianco, F. [1 ]
Fedus, K. [1 ]
Enrichi, F. [2 ]
Pierobon, R. [2 ]
Cazzanelli, M. [1 ]
Ghulinyan, M. [3 ]
Pucker, G. [3 ]
Pavesi, L. [1 ]
机构
[1] Univ Trento, Dept Phys, Nanosci Lab, I-38123 Trento, Italy
[2] CIVEN, I-30175 Marghera, VE, Italy
[3] Bruno Kessler Fdn, Adv Photon & Photovolta Grp, I-38123 Trento, Italy
关键词
2ND-HARMONIC GENERATION; SPECTROSCOPY; PRESSURE; CRYSTALS; DIAMOND; FILMS;
D O I
10.1088/0268-1242/27/8/085009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micro-Raman scattering experiments were performed on strained silicon waveguides designed for nonlinear optical experiments. Thin stressing silicon nitride (Si3N4 or SiNx) cladding layers, deposited on a light-guiding silicon core layer, strain silicon to enable chi((2)), the second-order nonlinear susceptibility. Different deposition treatments allow varying the applied stress. The resulting strained waveguides are investigated by micro-Raman confocal spectroscopy performed on the waveguide facet. By modelling the measured Raman shifts, the local stress and strain are extracted. Thus, two-dimensional maps of the stress distribution as a function of the SiNx deposition parameters are drawn. A comparison of different samples allows underlying the non-uniformity of resulting strain.
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页数:8
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