Properties of III-V Nanowires: MOSFETs and TunnelFETs

被引：0
|
作者：
Wernersson, Lars-Erik [1 ]
机构：
[1] Lund Univ, Elect & Informat Technol, Box 118, S-22100 Lund, Sweden
来源：
2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017) | 2017年
基金：
瑞典研究理事会;
关键词：
III-V nanowires; III-V MOSFETs; InAs; InAs//GaSb; TFETs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the properties and performance status of vertical III-V nanowire transistors. The development of key process modules has advanced the vertical fabrication technology and competitive device performance is reported for InAs MOSFETs and TunnelFETs. Besides the benefits in electrostatic control and the ease in integration on Si substrates, the vertical transistors offers a path towards 3D device integration as demonstrated by the stacked track-and-hold circuit where a capacitor is integrated on top of the vertical transistor for area reduction.
引用
收藏
页码：99 / 100
页数：2
相关论文
共 50 条
  • [1] III-V nanowires for optoelectronies
    Kim, Yong
    Gao, Q.
    Joyce, H. J.
    Tan, H. H.
    Jagadish, C.
    Paladugu, M.
    Zou, J.
    OPTOELETRONIC MATERIALS AND DEVICES, PTS 1 AND 2, 2006, 6352
  • [2] III-V Nanowire MOSFETs: RF-Properties and Applications
    Wernersson, Lars-Erik
    2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2020,
  • [3] III-V MOSFETs for Future CMOS
    del Alamo, J. A.
    Antoniadis, D. A.
    Lin, J.
    Lu, W.
    Vardi, A.
    Zhao, X.
    2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2015,
  • [4] Growth and properties of III-V compound semiconductor heterostructure nanowires
    Gao, Q.
    Tan, H. H.
    Jackson, H. E.
    Smith, L. M.
    Yarrison-Rice, J. M.
    Zou, Jin
    Jagadish, C.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (01)
  • [5] Epitaxial III-V nanowires on silicon
    Mårtensson, T
    Svensson, CPT
    Wacaser, BA
    Larsson, MW
    Seifert, W
    Deppert, K
    Gustafsson, A
    Wallenberg, LR
    Samuelson, L
    NANO LETTERS, 2004, 4 (10) : 1987 - 1990
  • [6] III-V Nanowires for Optoelectronic Applications
    Tan, H. H.
    Jiang, N.
    Saxena, D.
    Lee, Y. H.
    Mokkapati, S.
    Fu, L.
    Gao, Q.
    Joyce, H. J.
    Jagadish, C.
    SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11, 2013, 58 (07): : 93 - 98
  • [7] III-V Compound Semiconductor Nanowires
    Paiman, S.
    Joyce, H. J.
    Kang, J. H.
    Gao, Q.
    Tan, H. H.
    Kim, Y.
    Zhang, X.
    Zou, J.
    Jagadish, C.
    2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2009, : 155 - +
  • [8] Passivation of III-V Nanowires for Optoelectronics
    LaPierre, R. R.
    Chia, A. C. E.
    Haapamaki, C. M.
    Tajik, N.
    Li, Y.
    Zhao, S.
    Mi, Z.
    NANOSCALE LUMINESCENT MATERIALS 2, 2012, 45 (05): : 51 - 60
  • [9] Synthesis and Applications of III-V Nanowires
    Barrigon, Enrique
    Heurlin, Magnus
    Bi, Zhaoxia
    Monemar, Bo
    Samuelson, Lars
    CHEMICAL REVIEWS, 2019, 119 (15) : 9170 - 9220
  • [10] III-V Nanowires for Optoelectronic Applications
    Tan, H. H.
    Jiang, N.
    Lee, Y. H.
    Saxena, D.
    Parkinson, P.
    Gao, Q.
    Fu, L.
    Jagadish, C.
    2012 5TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC), 2012,
12345