Oxygen manipulation at the Co/SiO2interface and its effect on spin-dependent transport properties

被引：1
|
作者：
Liu, Qian [1 ]
Tian, Yaqiang [1 ]
Zheng, Xiaoping [1 ]
Chen, Liansheng [1 ]
Zhao, Yuqing [2 ]
Jiang, Shaolong [3 ]
机构：
[1] North China Univ Sci & Technol, Coll Met & Energy, Tangshan 063210, Peoples R China
[2] Hunan Univ Sci & Technol, Sch Phys, Xiangtan 411201, Peoples R China
[3] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2020年 / 126卷 / 07期
关键词：
Anomalous Hall effect; The Co; SiO(2)interface; Oxygen manipulation; INTERFACE; BEHAVIOR;
D O I：
10.1007/s00339-020-03680-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Oxygen manipulation at ferromagnetic metal (FM)/oxide heterointerfaces has been proved to be significantly effective in tailoring magnetic and transport properties. Herein, oxygen migration at the Co/SiO(2)interface with the aid of post-annealing treatment induces an enhancement of the anomalous Hall effect (AHE) for Pt/[Co/Pt](2)/Co/SiO2/Pt multilayers, which is identified by X-ray photoelectron spectroscopy. Nevertheless, there is not oxygen migration phenomenon at the SiO2/Co interface and the AHE is weakened due to Co-Pt interdiffusion during the annealing process for Pt/SiO2/Co/[Pt/Co](2)/Pt multilayers. This work may pave the way toward the application of FM/oxide heterointerfaces in spintronic devices.
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页数：4
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