Ka-band coplanar low-noise amplifier design with power PHEMTs

被引：2

作者：

Long, S ^{[1
]}

Escotte, L ^{[1
]}

Graffeuil, J ^{[1
]}

Fellon, P ^{[1
]}

Roques, D ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/EUMA.2003.340815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design of a coplanar lownoise amplifier (LNA) is presented in this paper. Pseudomorphic high electron mobility transistors (PHEMTs), optimized for power applications, are used In order to evaluate the potentiality of this technology for mixed mode applications. The three stages amplifier noise figure is lower than 2.6 dB on the 27-31 GHz frequency band with a 20 dB power gain.

引用

页码：17 / 20

页数：4

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