Pentacene transistors with polymer gate dielectrics on metallized optical fibers

It is difficult to deposit a very thin polymer layer onto a fiber-shaped substrate from solution because the high interfacial energy can lead to dewetting. This difficulty presents itself when attempting to apply a gate dielectric to conductive fiber substrates during the fabrication of fiber transistors for use in applications such as "electrotextiles" and optical switches. We present a dip coating process that applies a gate dielectric to metal-coated optical fibers with high uniformity and reproducibility, resulting in pentacene field-effect transistors (FETs) with excellent transistor characteristics including mobilities up to 0.4 cm(2)/Vs and on/off ratios up to 7000. In one case, a memory effect was demonstrated. Several gate dielectrics were successfully applied to the optical fibers, suggesting a baseline set of suitable materials for this purpose. A thorough study of the dip coating conditions is presented, including proposed explanations of the effects of different coating procedures and solution physical properties.