High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires

被引：110

作者：

Ganjipour, Bahram

Dey, Anil W. ^{[1
]}

Borg, B. Mattias

Ek, Martin

Pistol, Mats-Erik

Dick, Kimberly A.

Wernersson, Lars-Erik ^{[1
]}

Thelander, Claes ^{[1
]}

机构：

[1] Lund Univ, Elect & Informat Technol Dept, S-22100 Lund, Sweden

来源：

NANO LETTERS | 2011年 / 11卷 / 10期

基金：

瑞典研究理事会;

关键词：

Nanowire; Esaki tunnel diode; broken band; heterostructure; InAs; GaSb; tunnel FET; FIELD-EFFECT TRANSISTORS;

D O I：

10.1021/nl202180b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm(2) at 0.50 V, maximum peak current of 67 kA/cm(2) at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-kappa gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.

引用

收藏

页码：4222 / 4226

页数：5

相关论文

共 24 条

[1] Band-to-band tunneling in carbon nanotube field-effect transistors [J].

Appenzeller, J ;

Lin, YM ;

Knoch, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2004, 93 (19) :196805-1

[2] Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications [J].

Biercuk, MJ ;

Monsma, DJ ;

Marcus, CM ;

Becker, JS ;

Gordon, RG .

APPLIED PHYSICS LETTERS, 2003, 83 (12) :2405-2407

[3] Si-InAs heterojunction Esaki tunnel diodes with high current densities [J].

Bjork, M. T. ;

Schmid, H. ;

Bessire, C. D. ;

Moselund, K. E. ;

Ghoneim, H. ;

Karg, S. ;

Lortscher, E. ;

Riel, H. .

APPLIED PHYSICS LETTERS, 2010, 97 (16)

[4] InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors [J].

Borg, B. Mattias ;

Dick, Kimberly A. ;

Ganjipour, Bahram ;

Pistol, Mats-Erik ;

Wernersson, Lars-Erik ;

Thelander, Claes .

NANO LETTERS, 2010, 10 (10) :4080-4085

[5] ABSENCE OF BACKSCATTERING IN THE QUANTUM HALL-EFFECT IN MULTIPROBE CONDUCTORS [J].

BUTTIKER, M .

PHYSICAL REVIEW B, 1988, 38 (14) :9375-9389

[6] Practical Strategies for Power-Efficient Computing Technologies [J].

Chang, Leland ;

Frank, David J. ;

Montoye, Robert K. ;

Koester, Steven J. ;

Ji, Brian L. ;

Coteus, Paul W. ;

Dennard, Robert H. ;

Haensch, Wilfried .

PROCEEDINGS OF THE IEEE, 2010, 98 (02) :215-236

[7] Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec [J].

Choi, Woo Young ;

Park, Byung-Gook ;

Lee, Jong Duk ;

Liu, Tsu-Jae King .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) :743-745

[8] EXPERIMENTAL-OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE FROM AN INAS/GASB INTERFACE [J].

COLLINS, DA ;

YU, ET ;

RAJAKARUNANAYAKE, Y ;

SODERSTROM, JR ;

TING, DZY ;

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1990, 57 (07) :683-685

[9] ELECTRICAL CHARACTERIZATION OF SURFACE-DEFECTS IN GASB CREATED BY HYDROGEN PLASMA [J].

DUTTA, PS ;

SANGUNNI, KS ;

BHAT, HL ;

KUMAR, V .

APPLIED PHYSICS LETTERS, 1995, 66 (15) :1986-1988

[10] Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal Quality [J].

Ek, Martin ;

Borg, B. Mattias ;

Dey, Anil W. ;

Ganjipour, Bahram ;

Thelander, Claes ;

Wernersson, Lars-Erik ;

Dick, Kimberly A. .

CRYSTAL GROWTH & DESIGN, 2011, 11 (10) :4588-4593