Introduction to the Special Issue on "Simulation of GaN-based Light-Emitting Diodes"

The Special Issue of the Journal of Computational Electronics addresses the challenge of simulating GaN-based light-emitting diodes (LEDs). The Special Issue addresses the challenge by giving leading groups the chance to explain their recent results in detail. It reveals that most authors express the Auger process by the simple coefficient C since a realistic microscopic theory for Auger recombination in InGaN quantum wells is still not available. Some authors follow my suggestion to apply their theory to the same experimental LED structure, which enables a more direct comparison.