The ozone solubility and its decay in aqueous solutions: Crucial issues in ozonated chemistries for semiconductor cleaning

被引:10
作者
De Smedt, F
De Gendt, S
Heyns, MM
Vinckier, C
机构
[1] Katholieke Univ Leuven, Dept Chem, BE-3001 Leuven, Belgium
[2] IMEC VZW, BE-3001 Leuven, Belgium
来源
ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000 | 2001年 / 76-77卷
关键词
decomposition; kinetics; ozone; semiconductor cleaning; solubility;
D O I
10.4028/www.scientific.net/SSP.76-77.211
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The ozone decomposition rate in ultrapure water and the ozone solubility therein were investigated as a function of temperature, pH and nature of the additive used. The ozone decay rate is low (< 5.7 10(-5) s(-1)) at low pH except when HCl is used. Higher temperatures lead to higher ozone decay rates. The ozone solubility is temperature dependent: less ozone can be dissolved at higher temperature at a constant partial pressure in the gas phase. The solubility evolves towards a maximum at low pH except when HCl is present.
引用
收藏
页码:211 / 214
页数:4
相关论文
共 7 条
[1]  
CHRISTENSON K, 1999, P J ELECTROCHEM SOC, V9936, P189
[2]   A novel resist and post-etch residue removal process using ozonated chemistry [J].
De Gendt, S ;
Snee, P ;
Cornelissen, I ;
Lux, M ;
Vos, R ;
Mertens, PW ;
Knotter, DM ;
Meuris, MM ;
Heyns, M .
SOLID STATE PHENOMENA, 1999, 65-6 :165-168
[3]  
De Smedt F, 2000, J ELECTROCHEM SOC, V147, P1124, DOI 10.1149/1.1393323
[4]  
DEGENDT S, 1999, P J ELECTROCHEM SOC, V9936, P391
[5]  
DESMEDT F, 2000, THESIS KU LEUVEN BEL
[6]  
HEYNS MM, 1994, P 40 ANN TECHN M CHI
[7]   NATIVE OXIDE-GROWTH AND ORGANIC IMPURITY REMOVAL ON SI SURFACE WITH OZONE-INJECTED ULTRAPURE WATER [J].
OHMI, T ;
ISAGAWA, T ;
KOGURE, M ;
IMAOKA, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) :804-810