Long-wavelength emission from nitridized InAs quantum dots

被引：18

作者：

Kita, T ^{[1
]}

Masuda, Y ^{[1
]}

Mori, T ^{[1
]}

Wada, O ^{[1
]}

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 20期

关键词：

D O I：

10.1063/1.1627943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A technique to grow InAs quantum dots (QDs) to extend the emission wavelength into 1.3 mum range has been developed. We performed nitridation after growing InAs QDs by molecular-beam epitaxy. During nitridation, the reflection high-energy electron diffraction keeps chevron patterns, as well as streak rods, coming from the wetting layer. A longer-wavelength emission line with a narrower spectral linewidth compared with those of InAs QDs has been observed. (C) 2003 American Institute of Physics.

引用

页码：4152 / 4153

页数：2

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