Long-wavelength emission from nitridized InAs quantum dots

被引：18
|
作者：
Kita, T [1 ]
Masuda, Y [1 ]
Mori, T [1 ]
Wada, O [1 ]
机构：
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 20期
关键词：
D O I：
10.1063/1.1627943
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A technique to grow InAs quantum dots (QDs) to extend the emission wavelength into 1.3 mum range has been developed. We performed nitridation after growing InAs QDs by molecular-beam epitaxy. During nitridation, the reflection high-energy electron diffraction keeps chevron patterns, as well as streak rods, coming from the wetting layer. A longer-wavelength emission line with a narrower spectral linewidth compared with those of InAs QDs has been observed. (C) 2003 American Institute of Physics.
引用
收藏
页码：4152 / 4153
页数：2
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