P-induced nanocrystallite dispersion in amorphous-nanocrystalline mixed-phase Si:H thin films

被引：7

作者：

Jiang, C. -S. ^{[1
]}

Yan, B. ^{[2
]}

Yan, Y. ^{[1
]}

Teplin, C. W. ^{[1
]}

Reedy, R. ^{[1
]}

Moutinho, H. R. ^{[1
]}

Al-Jassim, M. M. ^{[1
]}

Yang, J. ^{[2
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] United Solar Ovon LLC, Troy, MI 48084 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 06期

关键词：

D O I：

10.1063/1.2891451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of P doping on the nanocrystalline formation in mixed-phase Si: H thin films were investigated using secondary-ion mass spectrometry, Raman spectroscopy, atomic force microscopy, cross-sectional transmission electron microscopy, and scanning Kelvin probe microscopy. We found that Si nanocrystallites in the intrinsic and weakly P-doped materials aggregate to form cone-shaped structures. The local workfunction of the nanocrystalline aggregation areas is larger than the surrounding amorphous areas. Increasing the P-doping level requires an increased hydrogen dilution to reach the similar Raman crystallinity. The nanocrystalline aggregation disappears in the heavily P-doped materials, but isolated nancrystallites appear. The effect of P-doping on the nanostructure is explained with the coverage of P-related radicals on the existing nanocrystalline surface during the deposition and the P segregation in grain boundaries, which prevent new nucleation on the surface of existing nanocrystallites. (c) 2008 American Institute of Physics.

引用

页数：6

共 17 条

[1] Evolution of microstructure and phase in amorphous, protocrystalline, and micro crystalline silicon studied by real time spectroscopic ellipsometry [J].