Kinetics of MBE incorporation of As4 on the (001) GaAs surface

被引：0
|
作者：
Galitsyn, YG [1 ]
Moshchenko, SP [1 ]
Suranov, AS [1 ]
机构：
[1] RAS, Inst Semicond Phys, SB, Novosibirsk 630090, Russia
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 1998年 / 7-8卷
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In the paper, a kinetic model is proposed describing epitaxial growth on the Ga-stabilized (001) GaAs surface from As-4 and Ga beams. The following elementary surface processes are considered: As-4 adsorption-desorption, As-4* bimolecular reaction, incorporation of As-2(chem) into the lattice sites. The model provides an adequate description of the experimental results on growth rate for low and high As-4 pressures. The role of As-4 desorption from surface in the epitaxial growth of GaAs crystals is analyzed.
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页码：81 / 89
页数：9
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