Low Noise, High PSRR, High-Order Piecewise Curvature Compensated CMOS Bandgap Reference

被引:13
|
作者
Fu, Ximing [1 ]
Colombo, Dalton Martini [2 ]
Yin, Yadong [3 ]
El-Sankary, Kamal [1 ]
机构
[1] Dalhousie Univ, Dept Elect & Comp Engn, Halifax, NS B3H 4R2, Canada
[2] Univ Fed Minas Gerais, Elect Engn Dept, BR-31270901 Belo Horizonte, MG, Brazil
[3] Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350025, Fujian, Peoples R China
来源
IEEE ACCESS | 2022年 / 10卷
关键词
Pre-regulator; BGR; curvature compensation; low-power operation; low area; subthreshold; temperature coefficient; VOLTAGE REFERENCE; CURRENT-MODE;
D O I
10.1109/ACCESS.2022.3215544
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A Bandgap reference (BGR) circuit with a new high-order curvature-compensation technique is proposed in this paper. The curvature method operates by adding up two correction voltages. The first one is proportional to the difference in gate-source voltages of two MOS transistors (Delta V-GS) operating in weak inversion mode, while the second one (V-NL) is generated using a nonlinear current created by a piecewise-linear circuit. To improve the power supply rejection ratio (PSRR) and the line regulation performance, a low-power pre-regulator isolates the circuit power supply and BGR output. Additionally, the chopping technique reduces the output voltage noise and offset. Consequently, the overall PVT robustness of the proposed circuit is significantly improved. The circuit was implemented using a thick-oxide transistor in a standard 0.18 mu m CMOS technology with a 3.3 V power supply voltage. The silicon results exhibit a temperature coefficient of 5-15 ppm/degrees C in the temperature range of -10 degrees C to 110 degrees C, whereas the simulated results demonstrate a similar performance within the temperature range of -40 degrees C to 150 degrees C. The supply current consumption is 150 mu A, and the chip area is 0.56 x 0.8 mm(2). The measured peak noise at the output is 1.42 mu V/root Hz @320 Hz, the measured PSRR @ 1 kHz is -80 dB, and the line regulation performance is 10 ppm/V, making the proposed circuit suitable for applications requiring low noise, high-order temperature compensation, and robust PVT performance.
引用
收藏
页码:110970 / 110982
页数:13
相关论文
共 50 条
  • [21] A CMOS Bandgap Reference with High PSRR and Improved Temperature Stability for System-on-Chip Applications
    Dey, Abhisek
    Bhattacharyya, Tarun Kanti
    2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2011,
  • [22] A 0.98 ppm/ degree celsius , high PSR, low noise curvature-compensated CMOS bandgap reference with resistor-less low-pass filter
    Ye, Chenchen
    Fang, Erxi
    Qi, Siyuan
    Ping, Haoyang
    IEICE ELECTRONICS EXPRESS, 2024, 21 (13):
  • [23] An Ultra-Low Power High-Order Temperature-Compensated CMOS Voltage Reference
    de Oliveira, Arthur Campos
    Cordova, David
    Klimach, Hamilton
    Bampi, Sergio
    2017 IEEE 15TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2017, : 13 - 16
  • [24] A CMOS piecewise curvature-compensated voltage reference
    Lai Xinquan
    Xu Ziyou
    Li Yanming
    Ye Qiang
    Man Maoli
    MICROELECTRONICS JOURNAL, 2009, 40 (01) : 39 - 45
  • [25] A High Order Curvature-Compensated Bandgap Voltage Reference with a Novel Error Amplifier
    Zhao, Gongyuan
    Ye, Mao
    Zhao, Yiqiang
    Hu, Kai
    Xin, Ruishan
    JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2017, 26 (09)
  • [26] Piecewise curvature compensated bandgap reference circuit with trimming procedure
    Xu C.
    Wu D.
    Li X.
    Xu D.
    Yu Y.
    Cheng X.
    Harbin Gongye Daxue Xuebao/Journal of Harbin Institute of Technology, 2020, 52 (04): : 112 - 118
  • [27] Implementation of Curvature Compensated High Precision Bandgap Reference Circuit
    Lin, Zhimin
    Xing, Jianli
    Zheng, Renzhong
    PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON ANTI-COUNTERFEITING, SECURITY, AND IDENTIFICATION IN COMMUNICATION, 2009, : 565 - 567
  • [28] A Resistor-Less CMOS Bandgap Reference with High-Order Temperature Compensation
    Chung, Yung-Hui
    Shih, Jia-Fong
    Wang, Yu-Hsiang
    2021 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2021) & 2021 IEEE CONFERENCE ON POSTGRADUATE RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIMEASIA 2021), 2021, : 1 - 4
  • [29] A Resistorless Voltage Reference with High-order Temperature Curvature Compensation in 55 nm CMOS Process
    Wu, Kejun
    Zhang, Yang
    Zhang, Qihui
    He, Guang
    Li, Jing
    Ning, Ning
    Liu, Yang
    Yu, Qi
    PROCEEDINGS OF THE 2017 5TH INTERNATIONAL CONFERENCE ON MECHATRONICS, MATERIALS, CHEMISTRY AND COMPUTER ENGINEERING (ICMMCCE 2017), 2017, 141 : 1210 - 1216
  • [30] A high-order curvature compensation technique for bandgap voltage reference using subthreshold MOSFETs
    Adl, Ahmad-Hossein
    El-Sankary, Kamal
    El-Masry, Ezz
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2010, 97 (07) : 783 - 796