Ridge-geometry InGaN multi-quantum-well-structure laser diodes

被引：176

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Sugimoto, Y

Kiyoku, H

机构：

[1] Dept. of Research and Development, Nichia Chemical Industries, Ltd., Anan, Tokushima 774, 491 Oka, Kaminaka

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 10期

关键词：

D O I：

10.1063/1.116913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stripe- and ridge-geometry in InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) were fabricated on sapphire substrates with (<11(2)over bar 0>) orientation (A face). The ridge-geometry InGaN MQW LDs showed strong stimulated emission at a wavelength of 411.3 nm under a pulsed current injection of 199 mA at room temperature, The differential quantum efficiency per facet and the threshold current of ridge-geometry LDs were 30% and 180 mA, respectively. The laser threshold current density was 3 kA/cm(2), These values were greatly improved in comparison to those of stripe-geometry LDs, The characteristic temperature of the threshold current was around 185 K. (C) 1996 American Institute of Physics.

引用

页码：1477 / 1479

页数：3

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