Electrical characterisation of (Ga,Mn,Cr)As thin films grown by molecular beam epitaxy

被引：3

作者：

Ibáñez, J

Edmonds, KW

Henini, M

Eaves, L

Pastor, D

Cuscó, R

Artús, L

Akinaga, H

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] CSIC, Inst Jaume Almera, Barcelona 08028, Catalonia, Spain

[3] AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058562, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

基金：

英国工程与自然科学研究理事会;

关键词：

hall measurements; molecular beam epitaxy; GaAs; (Ga; Mn)As; ferromagnetic semiconductors;

D O I：

10.1016/j.jcrysgro.2004.12.093

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We study the transport properties of molecular beam epitaxial Ga1-x-yMnxCryAs films with x = 3% and y = 0, 0.5 and 7%. We find that the hole concentration decreases with increasing Cr content, which can be attributed to increasing hole localisation in the Cr3+/Cr4+ impurity band. Our data indicate that carrier hopping or tunnelling are the main conduction mechanisms in the samples. We find no evidence of ferromagnetic ordering in the films co-doped with Mn and Cr. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：695 / 698

页数：4

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