Slow and fast light in photorefractive GaAs-AlGaAs multiple quantum wells in transverse geometry

被引:4
作者
Bo, Fang [1 ,2 ]
Liu, Ze [1 ,2 ]
Gao, Feng [1 ,2 ]
Zhang, Guoquan [2 ,3 ]
Xu, Jingjun [2 ,3 ]
机构
[1] Nankai Univ, TEDA Appl Phys Sch, Tianjin 300457, Peoples R China
[2] Nankai Univ, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R China
[3] Nankai Univ, Sch Phys, Photon Ctr, Tianjin 300071, Peoples R China
关键词
aluminium compounds; electro-optical effects; gallium arsenide; III-V semiconductors; light diffraction; multiwave mixing; photorefractive materials; semiconductor quantum wells;
D O I
10.1063/1.3485829
中图分类号
O59 [应用物理学];
学科分类号
摘要
We show theoretically that, based on the dispersive phase coupling effect during the wave mixing process, both slow and fast light can be achieved in GaAs-AlGaAs photorefractive multiple quantum wells (PRMQWs) films applied with a transverse direct-current electric field. The general formula for the group velocity of the diffracted beams in the Raman-Nath regime during the wave mixing process in a nonlinear thin film is derived and is then applied to the case of the PRMQWs films in the transverse geometry. The simulation results in the transverse-geometry PRMQWs films show that the group velocity and bandwidth of slow light can be on the order of centimeter per second and 100 kHz, respectively. The extremely low group velocity and the relatively broad bandwidth are mainly originated from the strong quadratic electro-optic effect and the fast response rate of the PRMQWs films, respectively. Our results show that the delay-bandwidth product of slow light can be significantly improved in PRMQWs films as compared to the reported results in other photorefractive materials. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3485829]
引用
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页数:8
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