Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

被引：6

作者：

He XuLin ^{[1
]}

Zhang JingQuan ^{[1
]}

Feng LiangHuan ^{[1
]}

Wu LiLi ^{[1
]}

Li Wei ^{[1
]}

Zeng GuangGen ^{[1
]}

Lei Zhi ^{[1
]}

Li Bing ^{[1
]}

Zheng JiaGui ^{[1
]}

机构：

[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China

来源：

SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2010年 / 53卷 / 09期

关键词：

CdTe; solar cells; admittance spectroscopy; deep-level defect; LEVEL TRANSIENT SPECTROSCOPY;

D O I：

10.1007/s11431-010-4032-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy technology. The positions and the capture cross sections of energy level in the forbidden band were calculated, which are the important parameters to affect solar cell performance. The results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer, whose positions in the forbidden band were close to 0.34, 0.46 and 0.51 eV, respectively above the valence band, and capture cross sections were 2.23x10(-16), 2.41x10(-14), 4.38x10(-13) cm(2), respectively.

引用

页码：2337 / 2341

页数：5

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