Effect of Double-Layered n-Type GaN on the Photoelectrochemical Properties in NaOH Aqueous Solution

被引:3
作者
Kim, Eunsook [1 ]
Bae, Hyojung [1 ]
Ko, Younghee [1 ]
Fujii, Katsushi [2 ]
Park, Hyung-Jo [3 ]
Jeong, Tak [3 ]
Lee, Hyo-Jong [4 ]
Oh, Tae-Sung [5 ]
Ha, Jun-Seok [1 ]
机构
[1] Chonnam Natl Univ, Sch Appl Chem Engn, Kwangju 500757, South Korea
[2] Univ Tokyo, Sch Engn, Dept Elect Engn & Informat Syst, Tokyo 1138656, Japan
[3] Korea Photon Technol Inst, Kwangju 500460, South Korea
[4] Dong A Univ, Dept Mat Sci & Engn, Pusan 604714, South Korea
[5] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea
基金
新加坡国家研究基金会;
关键词
HYDROGEN GENERATION; TIME-VARIATION; WATER; PHOTOCURRENT; ENERGY;
D O I
10.1149/2.0501501jes
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this study, photoelectrochemical properties of a double-layered n-type GaN in NaOH aqueous solution were investigated. Several electrical properties such as impedance, photocurrent-voltage property, and photocurrent-time relationship were examined for comparison. After the measurement the electrical properties, the surface of GaN photoelectrodes were observed by field emission scanning electron microscope to confirm the electrolytic corrosion. The results of this study indicate that the double-layered n-GaN electrode increased the photocurrent density compared to the single-layered electrode. Moreover, the surface of the double-layered n-GaN electrode was more stable than that of the single-layered n-GaN, indicating that surface layer preserved the lower layer from photocorrosion, and also its depletion length was enough to help the movement of carriers. These results show that the double-layered n-GaN electrode has more advantages than the single-layered n-GaN electrode. (C) 2014 The Electrochemical Society. All rights reserved.
引用
收藏
页码:H19 / H22
页数:4
相关论文
共 22 条
  • [2] Photoelectrolysis of water to hydrogen in p-SiC/Pt and p-SiC/n-TiO2 cells
    Akikusa, J
    Khan, SUM
    [J]. INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2002, 27 (09) : 863 - 870
  • [3] Photo-electrochemical hydrogen generation from water using solar energy. Materials-related aspects
    Bak, T
    Nowotny, J
    Rekas, M
    Sorrell, CC
    [J]. INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2002, 27 (10) : 991 - 1022
  • [4] Band-edge Potentials of n-type and p-type GaN
    Beach, JD
    Collins, RT
    Turner, JA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (07) : A899 - A904
  • [5] Photoelectrochemical properties of InGaN for H2 generation from aqueous water
    Fujii, K
    Kusakabe, K
    Ohkawa, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10): : 7433 - 7435
  • [6] Hydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation
    Fujii, K
    Karasawa, TK
    Ohkawa, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19): : L543 - L545
  • [7] Photoelectrochemical properties of nonpolar and semipolar GaN
    Fujii, Katsushi
    Iwaki, Yasuhiro
    Masui, Hisashi
    Baker, Troy J.
    Iza, Michael
    Sato, Hitoshi
    Kaeding, John
    Yao, Takafumi
    Speck, James S.
    Denbaars, Steven P.
    Nakamura, Shuji
    Ohkawa, Kazuhiro
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10A): : 6573 - 6578
  • [8] Hydrogen generation from aqueous water using n-GaN by photoassisted electrolysis
    Fujii, Katsushi
    Ohkawa, Kazuhiro
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2270 - 2273
  • [9] Time dependence of water-reducing photocurrent with change of the characteristics of n-type GaN photo-illuminated working electrodes
    Fujii, Katsushi
    Koike, Kayo
    Atsumi, Mika
    Goto, Takenari
    Itoh, Takashi
    Yao, Takafumi
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2457 - 2459
  • [10] Photoelectrochemical Properties of the p-n Junction in and near the Surface Depletion Region of n-Type GaN
    Fujii, Katsushi
    Ono, Masato
    Iwaki, Yasuhiro
    Sato, Keiichi
    Ohkawa, Kazuhiro
    Yao, Takafumi
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (51) : 22727 - 22735