A 210-284-GHz I-Q Receiver With On-Chip VCO and Divider Chain

被引：16

作者：

Alakusu, Utku ^{[1
]}

Dadash, M. Sadegh ^{[1
]}

Shopov, Stefan ^{[1
,2
]}

Chevalier, Pascal ^{[3
]}

Cathelin, Andreia ^{[3
]}

Voinigescu, Sorin P. ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

[2] Inphi Corp, Westlake Village, CA 91362 USA

[3] STMicroelectronics, F-38926 Crolles, France

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2020年 / 30卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Receivers; Radio frequency; Bandwidth; Silicon germanium; Mixers; Gain; Voltage-controlled oscillators; 90 degrees hybrid coupler; divider; I-Q downconverter; receiver; SiGe BiCMOS; variable-gain amplifier (VGA); voltage-controlled oscillator (VCO);

D O I：

10.1109/LMWC.2019.2954036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 240-GHz direct conversion I-Q receiver with 74-GHz RF bandwidth is reported. It features a mixer-first architecture with fundamental local oscillator (LO)-frequency Gilbert-cell downconversion mixers, variable-gain baseband amplifiers, and a 240-GHz LO source, making it the first fully integrated 240-GHz I-Q receiver. With a phase noise of -82 dBc/Hz at 1-MHz offset, the LO source has a 27-GHz tuning range and consists of a 120-GHz voltage-controlled oscillator (VCO), a frequency doubler, and a static divide-by-128 chain. The measured peak downconversion gain is 23 dB and is adjustable over 38 dB. Along with the IF bandwidth of 59 GHz, the wide RF bandwidth makes it suitable for both high data-rate communication and emerging quantum computing applications. The chip occupies an area of 1.837 mm(2) and consumes 859 mW.

引用

页码：50 / 53

页数：4

共 14 条

[1] Quantum supremacy using a programmable superconducting processor [J].

Arute, Frank ;

Arya, Kunal ;

Babbush, Ryan ;

Bacon, Dave ;

Bardin, Joseph C. ;

Barends, Rami ;

Biswas, Rupak ;

Boixo, Sergio ;

Brandao, Fernando G. S. L. ;

Buell, David A. ;

Burkett, Brian ;

Chen, Yu ;

Chen, Zijun ;

Chiaro, Ben ;

Collins, Roberto ;

Courtney, William ;

Dunsworth, Andrew ;

Farhi, Edward ;

Foxen, Brooks ;

Fowler, Austin ;

Gidney, Craig ;

Giustina, Marissa ;

Graff, Rob ;

Guerin, Keith ;

Habegger, Steve ;

Harrigan, Matthew P. ;

Hartmann, Michael J. ;

Ho, Alan ;

Hoffmann, Markus ;

Huang, Trent ;

Humble, Travis S. ;

Isakov, Sergei V. ;

Jeffrey, Evan ;

Jiang, Zhang ;

Kafri, Dvir ;

Kechedzhi, Kostyantyn ;

Kelly, Julian ;

Klimov, Paul V. ;

Knysh, Sergey ;

Korotkov, Alexander ;

Kostritsa, Fedor ;

Landhuis, David ;

Lindmark, Mike ;

Lucero, Erik ;

Lyakh, Dmitry ;

Mandra, Salvatore ;

McClean, Jarrod R. ;

McEwen, Matthew ;

Megrant, Anthony ;

Mi, Xiao .

NATURE, 2019, 574 (7779) :505-+

[2] Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs [J].

Bonen, S. ;

Alakusu, U. ;

Duan, Y. ;

Gong, M. J. ;

Dadash, M. S. ;

Lucci, L. ;

Daughton, D. R. ;

Adam, G. C. ;

Iordanescu, S. ;

Pasteanu, M. ;

Giangu, I. ;

Jia, H. ;

Gutierrez, L. E. ;

Chen, W. T. ;

Messaoudi, N. ;

Harame, D. ;

Mueller, A. ;

Mansour, R. R. ;

Asbeck, P. ;

Voinigescu, S. P. .

IEEE ELECTRON DEVICE LETTERS, 2019, 40 (01) :127-130

[3] A 55 nm Triple Gate Oxide 9 Metal Layers SiGe BiCMOS Technology Featuring 320 GHz fT/370 GHz fMAX HBT and High-Q Millimeter-Wave Passives [J].

Chevalier, P. ;

Avenier, G. ;

Ribes, G. ;

Montagne, A. ;

Canderle, E. ;

Celi, D. ;

Derrier, N. ;

Deglise, C. ;

Durand, C. ;

Quemerais, T. ;

Buczko, M. ;

Gloria, D. ;

Robin, O. ;

Petitdidier, S. ;

Campidelli, Y. ;

Abbate, F. ;

Gros-Jean, M. ;

Berthier, L. ;

Chapon, J. D. ;

Leverd, F. ;

Jenny, C. ;

Richard, C. ;

Gourhant, O. ;

De-Buttet, C. ;

Beneyton, R. ;

Maury, P. ;

Joblot, S. ;

Favennec, L. ;

Guillermet, M. ;

Brun, P. ;

Courouble, K. ;

Haxaire, K. ;

Imbert, G. ;

Gourvest, E. ;

Cossalter, J. ;

Saxod, O. ;

Tavernier, C. ;

Foussadier, F. ;

Ramadout, B. ;

Bianchini, R. ;

Julien, C. ;

Ney, D. ;

Rosa, J. ;

Haendler, S. ;

Carminati, Y. ;

Borot, B. .

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,

[4]

Chevalier P, 2018, 2018 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), P64, DOI 10.1109/BCICTS.2018.8550963

[5] Wideband 240-GHz Transmitter and Receiver in BiCMOS Technology With 25-Gbit/s Data Rate [J].

Eissa, Mohamed Hussein ;

Malignaggi, Andrea ;

Wang, Ruoyu ;

Elkhouly, Mohamed ;

Schmalz, Klaus ;

Ulusoy, Ahmet Cagri ;

Kissinger, Dietmar .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2018, 53 (09) :2532-2542

[6]

Elkhouly M., 2013, P IEEE RAD FREQ INT, P305

[7]

Girma MG, 2012, EUR MICROW INTEGRAT, P357

[8] Frequency division multiplexing readout and simultaneous manipulation of an array of flux qubits [J].

Jerger, M. ;

Poletto, S. ;

Macha, P. ;

Huebner, U. ;

Il'ichev, E. ;

Ustinov, A. V. .

APPLIED PHYSICS LETTERS, 2012, 101 (04)

[9]

Mehrpoo M, 2019, IEEE INT SYMP CIRC S

[10] A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output [J].

Shopov, Stefan ;

Balteanu, Andreea ;

Hasch, Juergen ;

Chevalier, Pascal ;

Cathelin, Andreia ;

Voinigescu, Sorin P. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (09) :2054-2065

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