Avoid the kinks when measuring mobility Transistor measurements can overstate organic semiconductor charge carrier mobility

被引：213

作者：

McCulloch, Iain ^{[1
,2
,3
]}

Salleo, Alberto ^{[4
]}

Chabinyc, Michael ^{[5
]}

机构：

[1] King Abdullah Univ Sci & Technol, KSC, Thuwal 239556900, Saudi Arabia

[2] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

[3] Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England

[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[5] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

SCIENCE | 2016年 / 352卷 / 6293期

关键词：

FIELD-EFFECT TRANSISTORS;

D O I：

10.1126/science.aaf9062

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：1521 / 1522

页数：2

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