Large-area WSe2 electric double layer transistors on a plastic substrate

被引：9

作者：

Funahashi, Kazuma ^{[1
]}

Pu, Jiang ^{[1
]}

Li, Ming-Yang ^{[2
]}

Li, Lain-Jong ^{[3
]}

Iwasa, Yoshihiro ^{[4
,5
]}

Takenobu, Taishi ^{[1
,6
,7
]}

机构：

[1] Waseda Univ, Dept Adv Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

[2] Acad Sinica, Inst Atom & Mol Sci, Taipei 11529, Taiwan

[3] KAUST, Thuwal 239556900, Saudi Arabia

[4] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[5] RIKEN Ctr Emergent Matter Sci CEMS, Wako, Saitama 3510198, Japan

[6] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan

[7] Waseda Univ, Kagami Mem Lab, Shinjuku Ku, Tokyo 1690051, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 06期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; SINGLE-LAYER; HIGH-PERFORMANCE; MOS2; TRANSISTORS; HIGH-MOBILITY; MONOLAYER; TRANSPARENT; MOLYBDENUM;

D O I：

10.7567/JJAP.54.06FF06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of similar to 10(4), demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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