Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Study by Spectroscopic Ellipsometry

被引:7
作者
Longo, V. [1 ]
Leick, N. [1 ]
Roozeboom, F. [1 ]
Kessels, W. M. M. [1 ]
机构
[1] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands
来源
ATOMIC LAYER DEPOSITION APPLICATIONS 7 | 2011年 / 41卷 / 02期
关键词
THIN-FILMS; ELECTRICAL-PROPERTIES; SEED LAYER; ALD; PRECURSORS; H2O;
D O I
10.1149/1.3633655
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Strontium titanate (SrTiO3, STO) films were deposited by plasma-assisted ALD using cyclopentadienyl-based Sr and Ti precursors with O-2 plasma as the oxidizing agent. As determined from Rutherford backscattering spectroscopy (RBS), [Sr]/[Ti] ratios ranging from 0.73 to 2.13 were achieved for 30-40 nm thick films by tuning the [SrO]/[TiO2] ALD cycle ratio. Films deposited at 250 degrees C were amorphous and required post-deposition annealing to crystallize into the ultrahigh-k perovskite structure. The crystallization temperature strongly depended on the film composition as observed by X-ray diffraction (XRD) measurements after rapid thermal annealing (RTA). Using RBS and XRD data as a combined-cross reference, it was shown that the film stoichiometry and the crystallinity can be probed directly by spectroscopic ellipsometry (SE).
引用
收藏
页码:63 / 72
页数:10
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