Evidence for semiconducting behavior with a narrow band gap of Bernal graphite

被引：63
作者：
Garcia, N. [2 ,3 ]
Esquinazi, P. [1 ]
Barzola-Quiquia, J. [1 ]
Dusari, S. [1 ]
机构：
[1] Univ Leipzig, Inst Expt Phys 2, Div Superconduct & Magnetism, D-04103 Leipzig, Germany
[2] CSIC, Lab Fis Sistemas Pequenos & Nanotecnol, E-28006 Madrid, Spain
[3] Univ Fed Santa Catarina, Lab Filmes Finos & Superficies, Florianopolis, SC, Brazil
来源：
NEW JOURNAL OF PHYSICS | 2012年 / 14卷
关键词：
DIRAC-FERMIONS; TRANSITION; BICRYSTALS; TRANSPORT; SUPERCONDUCTIVITY; INTERFACES; GERMANIUM; ENERGY; BI;
D O I：
10.1088/1367-2630/14/5/053015
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have studied the resistance of a large number of highly oriented graphite samples with areas ranging from several mm(2) to a few mu m(2) and thickness from similar to 10 nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density < 10(9) cm(-2) and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a semiconductor with a narrow band gap E-g similar to 40 meV.
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页数：14
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