Effects of Ni substitution on structural, dielectrical, and ferroelectric properties of chemical-solution-deposited multiferroic BiFeO3 films

被引：17

作者：

Singh, S. K. ^{[1
]}

Palai, R. ^{[2
]}

Maruyama, K. ^{[3
]}

Ishiwara, H. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA

[3] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 07期

关键词：

D O I：

10.1149/1.2912024

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Multiferroic thin films of Ni-substituted BiFeO(3) were grown by chemical-solution deposition on Pt/Ti/SiO(x)/Si(100) substrates. Films with up to 7.5 atom % Ni substitution showed a single perovskite phase with rhombohedral structure at room temperature, while films with 10 atom % Ni substitution showed a tetragonal-like crystal structure. Ni substitution of 2.5 atom % was effective in suppressing leakage current in the high-electric-field region with high polarization (72 mu C/cm(2)) and coercive field (340 kV/cm) when polarization vs electric field hysteresis loops were drawn at 20 kHz with a maximum electric field of 1100 kV/cm. (C) 2008 The Electrochemical Society.

引用

页码：G30 / G32

页数：3

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