Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces

被引：0
作者：
Bertomeu, J
Puigdollers, J
Asensi, JM
Andreu, J
机构：
[1] Lab. de Física de Capes Fines, Dept. de Fis. Apl. i Electronica, Universitat de Barcelona, 08028 Barcelona (Catalonia), Av. Diagonal
来源：
APPLIED SURFACE SCIENCE | 1997年 / 108卷 / 02期
关键词：
D O I：
10.1016/S0169-4332(96)00600-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Infrared spectroscopy was used to characterize three series of a-Si:H/a-Si1-xCx:H multilayers in which their geometrical parameters were varied. The infrared active vibrational groups in their spectra and the interference fringes in their absorption-free zone were studied to analyze the interfaces and the changes that are produced in very thin layers. Our results show that hydrogen is bonded to silicon only in monohydride groups. No additional hydrogen could be detected at these interfaces. The deposition of very thin a-Si1-xCx:H layers seems to affect their porous structure, making them denser.
引用
收藏
页码：211 / 217
页数：7
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