Low-temperature controllable preparation of vertically standing graphene sheets on indium tin oxide glass and their field emission properties

被引：5
|
作者：
Zou, Fei [1 ]
Zhou, Haitao [1 ]
Yu, Ning [2 ]
Yao, Zhaohui [2 ]
Liu, Fei [3 ]
Shen, Chengmin [4 ]
机构：
[1] Chinese Aeronaut Estab, Beijing 100012, Peoples R China
[2] Tsinghua Univ, Sch Aerosp Engn, Beijing 100084, Peoples R China
[3] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[4] Chinese Acad Sci, Inst Phys, Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China
来源：
CHEMICAL PHYSICS LETTERS | 2016年 / 664卷
基金：
美国国家科学基金会;
关键词：
CVD; Scanning electron microscopy; Glass; Electrical properties; Vertically standing graphene; FEW-LAYER GRAPHENE; TRANSPARENT CONDUCTIVE FILMS; GROWTH; PERFORMANCE; ELECTRONICS; NANOSHEETS; DEVICES;
D O I：
10.1016/j.cplett.2016.09.080
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Vertically standing graphene sheets (VSGs) were successfully grown on indium tin oxide (ITO) glass through plasma enhanced chemical vapor deposition system. The lateral size of the graphene sheets was evidently affected by the growth temperature. The VSGs with smaller sheet size were obtained at 600 degrees C thanat 500 degrees C. The dependence of the field-emission behavior of VSGs grown on ITO glass (VSGs/ITO) on the sheet size was investigated. The VSGs/ITO films with smaller sheet size possessed a higher field-enhancement factor and a lower turn-on field, which was proposed to be attributed to more field-emission sites and better electrical conductivity. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：29 / 32
页数：4
相关论文
共 35 条
  • [21] Facile and highly efficient preparation of semi-transparent, patterned and large-sized reduced graphene oxide films by electrochemical reduction on indium tin oxide glass surface
    Peng, Xin
    Wu, Yuqing
    Chen, Nan
    Zhu, Zhongcheng
    Liu, Jiaqi
    Wang, Huiliang
    THIN SOLID FILMS, 2019, 692
  • [22] Low-temperature NO2-sensing properties and morphology-controllable solvothermal synthesis of tungsten oxide nanosheets/nanorods
    Wang, Zishuai
    Hu, Ming
    Wei, Yulong
    Liu, Junfeng
    Qin, Yuxiang
    APPLIED SURFACE SCIENCE, 2016, 362 : 525 - 531
  • [23] Low-temperature preparation and microwave dielectric properties of ZBS glass-Al2O3 composites
    Yoon, Sang Ok
    Shim, Sang Heung
    Kim, Kwan Soo
    Park, Jong Guk
    Kim, Shin
    CERAMICS INTERNATIONAL, 2009, 35 (03) : 1271 - 1275
  • [24] Vertically aligned single-crystalline ultra-thin CuO nanosheets: Low-temperature fabrication, growth mechanism, and excellent field emission
    Wang, C.-W. (cwwang@nwnu.edu.cn), 1600, Elsevier Ltd (609):
  • [25] Field-Emission Characteristics of Zinc Oxide Nanowires Using Low-Temperature Supercritical Carbon Dioxide Fluid Method
    Yang, Po-Yu
    Agarwal, Sanjay
    Cheng, Huang-Chung
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (01) : 119 - 121
  • [26] Synthesis of Ni-doped ZnO nanostructures by low-temperature wet chemical method and their enhanced field emission properties
    Rana, Amit Kumar
    Bankar, Prashant
    Kumar, Yogendra
    More, Mahendra A.
    Late, Dattatray J.
    Shirage, Parasharam M.
    RSC ADVANCES, 2016, 6 (106) : 104318 - 104324
  • [27] Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass substrates
    Chen, Kai-Huang
    Chang, Ting-Chang
    Chang, Guan-Chang
    Hsu, Yung-En
    Chen, Ying-Chung
    Xu, Hong-Quan
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (01): : 291 - 295
  • [28] Synthesis of a zinc oxide nanosheet-nanowire network complex by a low-temperature chemical route: Efficient UV detection and field emission property
    Maiti, U. N.
    Chattopadhyay, K. K.
    Karan, S.
    Mallik, B.
    SCRIPTA MATERIALIA, 2010, 62 (05) : 305 - 308
  • [29] The effects of CF4 plasma treatment on the performance, gate bias stability, and defect characteristics of low-temperature indium-gallium-tin-oxide thin-film transistors
    Kim, Dongbhin
    Lee, Kyeong-Bae
    Noh, Junho
    Kim, Donghyun
    Park, Hyunsoo
    Choi, Byoungdeog
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 191
  • [30] Low-temperature processed high-performance visible-transparent Ga2O3 solar blind ultraviolet photodetectors with the indium-tin-oxide electrode
    Li, Zhe
    Xu, Yu
    Cheng, Yaolin
    Zhang, Jiaqi
    Chen, Dazheng
    Yao, Danyang
    Feng, Qian
    Xu, Shengrui
    Zhang, Jincheng
    Zhang, Chunfu
    Hao, Yue
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (12)
1234